发明名称 |
NANOIMPRINT LITHOGRAPHY METHOD |
摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to microelectronics and can be used in nanoimprint lithography when making ordered arrays of magnetic and other structures. The method involves formation of a relief on a resist coating deposited on a substrate via nanoimprint lithography with application of exciting ultrasonic oscillations and an axial force onto a die. Ultrasonic oscillations arising when the die gets into contact with the resist are also detected in the substrate, from the intensity and/or phase and/or spectrum from which the degree of filling the die relief with the resist is determined. ^ EFFECT: invention enables monitoring formation of a relief without restrictions on optical properties of substrates. ^ 7 cl, 1 dwg |
申请公布号 |
RU2384871(C1) |
申请公布日期 |
2010.03.20 |
申请号 |
RU20080146595 |
申请日期 |
2008.11.26 |
申请人 |
UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK INSTITUT RADIOTEKHNIKI I EHLEKTRONIKI IM. V.A. KOTEL'NIKOVA, RAN |
发明人 |
NIKITOV SERGEJ APOLLONOVICH;FILIMONOV JURIJ ALEKSANDROVICH;VYSOTSKIJ SERGEJ L'VOVICH;KOZHEVNIKOV ALEKSANDR VLADIMIROVICH;KHIVINTSEV JURIJ VLADIMIROVICH;DZHUMALIEV ALEKSANDR SERGEEVICH;NIKULIN JURIJ VASIL'EVICH;VESELOV ALEKSANDR GEORGIEVICH |
分类号 |
G01N29/04;G03F7/00 |
主分类号 |
G01N29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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