| 摘要 |
FIELD: measurement equipment. ^ SUBSTANCE: invention refers to measurement equipment and is designed for non-contact non-destructive inspection of chips quality of semiconducting photoconverters. Testing method of chips of cascade photoconverters based on AI-Ga-In-As-P connections involves irradiation of the surface section of the tested chip with laser radiation with wave length (0.40-0.55) mcm, direction of photoelectroluminescence radiation on photoreceiver, which appears in non-irradiated section of the chip, and photoreceiver has photosensibility to radiation with wave length of more than 0.6 mcm, measurement of intensity of photoelectroluminescence radiation and determination of chip quality. Testing device includes laser with radiation wave length of 0.40-0.55 mcm, lens, platform to arrange the matrix of tested chips and installed on the base, objective, optical filter and photoreceiver photosensitive to radiation with wave lengths of more than 0.6 mcm, which are installed on one and the same optical axis, and screen. Photoreceiver is connected through amplifier to controller with memory unit. ^ EFFECT: development of such non-contact testing method of chips of cascade photoconverters based on AI-Ga-In-As-P connections and device for implementation thereof, which will allow simplifying the testing process and reducing the time required for check of separate chips. ^ 4 cl, 1 dwg |
