| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention relates to design of semiconductor devices and can be used in making power diodes, thyristors, IGBT and other devices with solder-free assembly design with low and stable values of voltage drop in the on state (Von) and thermal resistance (Rth). The semiconductor power device with completely solder-free contacts has a semiconductor wafer with n-type and p-type conductivity layers between cathode and anode thermal compensators with flanges whose diametre is larger than the diametre of the semiconductor wafer, where the thermal compensators are placed inside an insulating ring. Edges of the insulating ring encircle flanges of the thermal compensators and extend to the outer surface of the cathode and anode thermal compensators by not less than 1 mm. The insulating ring is made from elastic material. ^ EFFECT: lower and stable values of voltage drop in the on state Von and thermal resistance of the device Rth by providing a fixed position of the semiconductor wafer relative the top and bottom thermal compensators. ^ 1 dwg, 1 tbl |
