GROWING METHOD OF ZINC OXIDES LAYERS

摘要

FIELD: metallurgy. ^ SUBSTANCE: invention relates to ferrous optoelectronics, electronics, solar power engineering and is to be used for manufacture of semiconductors and microcircuits. Method of zinc oxide layers' growing from sublimating source of vapours is implemented by zonal sublimation recrystallisation at two stages - at flat substrate with smooth optical surface it is formed layer of zinc of thickness from 1-10 mcm at pressure of residues gas in working chamber 10-3 Pa, velocity of zinc sublimation V0=100-120 mcm/h and temperature 620-650K, and temperature fall between source of zinc and substrate is 140-160K, herewith vacuum microcell allows maximal thickness 500-600 mcm then by replacement of sublimating source of zinc vapours on source of oxygen vapours grown layers are subject to oxidation at temperature 570-600K. ^ EFFECT: receiving of separated from substratum layers of zinc oxide of increased thickness and area.