| 摘要 |
<p>Disclosed is a photoelectric conversion device, wherein semiconductor layers (2, 2a, 2b, 2c, 12a, 12b, 101) and dielectric films (6, 6a, 6b, 6c, 26, 32, 34, 37, 39, 60, 105), which are arranged in contact with the surfaces of the semiconductor layers (2, 2a, 2b, 2c, 12a, 12b, 101), are included, and the dielectric films (6, 6a, 6b, 6c, 26, 32, 34, 37, 39, 60, 105) have impurities (5, 20, 21, 25, 50, 104) to be positive or negative fixed charges in the vicinity of interfaces between the dielectric films and the semiconductor layers (2, 2a, 2b, 2c, 12a, 12b, 101). Furthermore, the photoelectric conversion device includes semiconductor layers (2a, 2b, 2c), and dielectric films (6, 26, 32, 34, 37, 39), which are arranged in contact with the surfaces of the semiconductor layers (2a, 2b, 2c), and the dielectric films (6, 26, 32, 34, 37, 39) have the impurities (5, 25) to be positive or negative fixed charges in the vicinity of the interfaces between the dielectric films and the semiconductor layers (2a, 2b, 2c), and also have transparent conductive films (9, 33, 38) on the surfaces of the dielectric films (6, 26, 32, 34, 37, 39). Carriers transfer in the dielectric films (6, 26, 32, 34, 37, 39) by tunnel effects and the like and are taken out to the external from the transparent conductive films (9, 33, 38).</p> |
