| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for improving the life of a connection section between a semiconductor device and a substrate by solder, while suppressing warpage of a semiconductor substrate. <P>SOLUTION: In the semiconductor device, a solder junction surface 32 is formed at the side of a first surface 2b (rear) of the semiconductor substrate 2, the side of the first surface 2b of the semiconductor substrate 2 except the solder junction surface 32 is covered with a resin layer 30 (package layer). The semiconductor substrate 2 includes a sheet section 40 having a thickness smaller than that of other regions. In a plan view of the semiconductor substrate 2, a range in which the solder junction surface 32 is formed is included, and the sheet section 40 is formed over a region wider than the range. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
