SILICON WAFER FOR VERTICAL SILICON DEVICE AND ITS MANUFACTURING METHOD, SILICON SINGLE CRYSTAL, AND VERTICAL SILICON DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a CZ wafer having a nearly uniform and high resistance at a high yield without applying a neutron radiation thereto. Ž<P>SOLUTION: A silicon solid layer 21a and a silicon liquid layer 21b as raw materials are supplied to coexist in a quartz crucible 14, and a silicon ingot 20 is pulled up from the liquid layer 21b while melting the solid layer 21a. A silicon wafer sliced from the silicon ingot 20 is annealed in an oxygen atmosphere according to an interstitial oxygen concentration so as to extinguish crystal originated particles (COP). As a result, variation in resistivity due to segregation of a dopant can be suppressed and the resistivity in the axial direction of the silicon ingot can be made high and equal to or higher than 1 Ωcm over 50% or more of the total length. Furthermore, the crystal originated particles (COP) can be completely embedded and made to disappear by annealing in the oxygen atmosphere. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž