发明名称 |
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Provided is a resistance variable non-volatile memory device using a trap-controlled Space Charge Limited Current (SCLC), and a manufacturing method thereof. The memory device includes a bottom electrode; an inter-electrode dielectric thin film diffusion prevention film formed on the bottom electrode; a dielectric thin film formed on the inter-electrode dielectric thin film diffusion prevention film and having a plurality of layers with different charge trap densities; and a top electrode formed on the dielectric thin film.
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申请公布号 |
US2010065803(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20070517554 |
申请日期 |
2007.11.28 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHOI SUNG-YOOL;RYU MIN-KI;JEONG HU-YOUNG |
分类号 |
H01L45/00;H01L21/28 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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