发明名称 |
APPARATUS AND METHOD FOR MEMORY |
摘要 |
<p>A programmable resistance memory includes a volume of programmable resistance material formed between and coupled to two electrodes. The volume of programmable resistance material includes a region of enhanced programmability that is positioned to maximize the effect of a programming current. The region of enhanced programmability is positioned at a distance from regions of high thermal conductivity, such as areas in close proximity to electrodes.</p> |
申请公布号 |
WO2010030503(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
WO2009US54978 |
申请日期 |
2009.08.26 |
申请人 |
OVONYX, INC;HUDGENS, STEPHEN |
发明人 |
HUDGENS, STEPHEN |
分类号 |
G11C13/02 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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