| 发明名称 |
METHOD FOR FABRICATING LOCALLY PASSIVATED GERMANIUM-ON-INSULATOR SUBSTRATE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for fabricating a germanium-on insulator substrate capable of desired passivation and desired improvement regarding electron mobility by a GeO<SB>x</SB>N<SB>y</SB>layer. <P>SOLUTION: Relating to the method for fabricating a locally passivated germanium-on-insulator substrate, in order to achieve high electron mobility, nitridized regions are formed at localized positions. Nitridizing is achieved using a plasma treatment. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010062563(A) |
申请公布日期 |
2010.03.18 |
| 申请号 |
JP20090200482 |
申请日期 |
2009.08.31 |
| 申请人 |
SOI TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
SIGNAMARCHEIX THOMAS;ALLIBERT FREDERIC;DEGUET CHRYSTEL |
| 分类号 |
H01L21/02;H01L21/336;H01L21/76;H01L21/762;H01L21/8238;H01L27/08;H01L27/092;H01L27/12;H01L29/786 |
主分类号 |
H01L21/02 |
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