| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a silicon wafer having nearly uniform high resistance can be manufactured in a high yield without performing irradiation with a neutron beam. SOLUTION: The method for manufacturing a silicon wafer for a vertical silicon device includes pulling a silicon single crystal from a silicon melt 21, in which a volatile dopant such as antimony is added, by a Czochralski method. In the method, the flow rate of Ar gas flowing along the surface of the silicon melt is increased in association with the progress of pulling of the silicon single crystal. Thereby, as the evaporation of the dopant from the silicon melt is facilitated in association with the progress of pulling, the segregation of the dopant is effectively compensated. Further, it is preferable that the pressure in a chamber 11 is reduced in association with the progress of pulling of the silicon single crystal. Accordingly, the segregation of the dopant can be more surely compensated. COPYRIGHT: (C)2010,JPO&INPIT
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