发明名称 |
Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same |
摘要 |
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.
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申请公布号 |
US2010065819(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20070311567 |
申请日期 |
2007.10.05 |
申请人 |
HITACHI CHEMICAL CO., LTD.;HITACHI CHEMICAL RESEARCH CENTER, INC. |
发明人 |
WU YONGXIAN |
分类号 |
H01L31/0352;H01L21/306;H01L29/06;H01L29/66 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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