发明名称 Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
摘要 A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.
申请公布号 US2010065819(A1) 申请公布日期 2010.03.18
申请号 US20070311567 申请日期 2007.10.05
申请人 HITACHI CHEMICAL CO., LTD.;HITACHI CHEMICAL RESEARCH CENTER, INC. 发明人 WU YONGXIAN
分类号 H01L31/0352;H01L21/306;H01L29/06;H01L29/66 主分类号 H01L31/0352
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