| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has high design freedom on substrate and semiconductor chip, and also has excellent electric characteristics. <P>SOLUTION: This semiconductor device comprises a multilayer wiring structure semiconductor chip 11 with an insulating film 13 formed on a chip 11, a plurality of electrode pads 14 formed on the insulating film 13 at the central part and on the outer peripheral part respectively, and a plurality of protective metal layers 17 formed on the electrode pads 14 respectively; and an organic substrate 21 with a plurality of substrate terminals 221, 222 formed at positions corresponding to the electrode pads 14 respectively. The semiconductor device is mounted in such a way that the semiconductor chip 11 is mounted on the substrate 21 by connecting a stud bump 23 to a solder bump 18, wherein the stud bump 23 is formed on the protective metal layers 17 and on either of the substrate terminals 221, 222, and the solder bump 18 is formed on the other side of the stud bump 23. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
