| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method with which pattern falling hardly occurs when trimming a resist pattern and an etching amount in a longitudinal direction of the pattern can be reduced, and a resist pattern reforming method for reforming the resist pattern prior to trimming. SOLUTION: The disclosed method includes the steps of: conveying a substrate, on which a patterned photo resist is formed, into a treatment container 10, and placing the substrate at a lower electrode; supplying a reforming treatment gas into the treatment container 10; generating plasma of the treatment gas by applying high frequency power from a first high frequency applying means 48 to an upper electrode 34 and further reforming the resist pattern by applying a negative DC voltage from a DC voltage applying means 50 to the upper electrode 34; and trimming the reformed resist pattern through plasma etching. COPYRIGHT: (C)2010,JPO&INPIT |
