发明名称 THIN ACTIVE LAYER FISHBONE PHOTODIODE WITH A SHALLOW N+ LAYER AND METHOD OF MANUFACTURING THE SAME
摘要 The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
申请公布号 WO2010031011(A2) 申请公布日期 2010.03.18
申请号 WO2009US56875 申请日期 2009.09.15
申请人 UDT SENSORS, INC.;BUI, PETER, STEVEN;TANEJA, NARAYAN, DASS 发明人 BUI, PETER, STEVEN;TANEJA, NARAYAN, DASS
分类号 H01L31/102;H01L31/18 主分类号 H01L31/102
代理机构 代理人
主权项
地址