THIN ACTIVE LAYER FISHBONE PHOTODIODE WITH A SHALLOW N+ LAYER AND METHOD OF MANUFACTURING THE SAME
摘要
The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
申请公布号
WO2010031011(A2)
申请公布日期
2010.03.18
申请号
WO2009US56875
申请日期
2009.09.15
申请人
UDT SENSORS, INC.;BUI, PETER, STEVEN;TANEJA, NARAYAN, DASS