发明名称 GAS SENSOR
摘要 <p>Provided is a gas sensor of simple structure, having a self-diagnostic function. A gas sensor (30) consisting of two field effect transistors, in which gate electrodes are provided on respective gate insulating films (24) of the two field effect transistors, for detecting gas by the gate electrodes.  The gas sensor (30) comprises a first gate electrode (5) provided in one of the two field effect transistors, a second gate electrode (6) provided in the other field effect transistor, and a voltage application means for applying the same potential or, direct-current voltages having a constant voltage difference therebetween or alternating-current voltages having a constant voltage difference therebetween across the first gate electrode (5) and second gate electrode (6) which are connected to each other by wiring.  The first gate electrode (5) and the second gate electrode (6) are formed of different metals.  The two field effect transistors have the same structure.</p>
申请公布号 WO2010029805(A1) 申请公布日期 2010.03.18
申请号 WO2009JP61912 申请日期 2009.06.30
申请人 NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY;TSUKADA KEIJI 发明人 TSUKADA KEIJI
分类号 G01N27/00 主分类号 G01N27/00
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