| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the electrical reliability of the semiconductor device by preventing the electrical short circuit between gates which are formed on an junction region of an active region and an element isolation layer. CONSTITUTION: An element isolation layer(160) is formed on a semiconductor substrate(110). The element isolation layer defines an active region(120) including a gate formation region. A mask layer is formed in the active region. A patterning process is performed on the mask layer in order to form an mask pattern(170). The mask pattern exposes the gate formation region. An etch-back process to the semiconductor substrate is performed to recess the gate formation layer.
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