| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor wafer having a surface and a backside. SOLUTION: The method includes: polishing the backside of the semiconductor wafer by using CMP, which involves material removal with a profile along the diameter of the semiconductor wafer according to which the material removal is higher in a center region of the backside than in an edge region of the backside; and polishing the surface of the semiconductor wafer by using CMP, which involves material removal with a profile along the diameter of the semiconductor wafer according to which the material removal is lower in a center region of the surface than in an edge region of the surface. COPYRIGHT: (C)2010,JPO&INPIT
|
