发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
A semiconductor module includes a multilayer substrate. The multilayer substrate includes a first metal layer and a first ceramic layer over the first metal layer. An edge of the first ceramic layer extends beyond an edge of the first metal layer. The multilayer substrate includes a second metal layer over the first ceramic layer and a second ceramic layer over the second metal layer. An edge of the second ceramic layer extends beyond an edge of the second metal layer. The multilayer substrate includes a third metal layer over the second ceramic layer.
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申请公布号 |
US2010065962(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090624622 |
申请日期 |
2009.11.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BAYERER REINHOLD;HUNGER THOMAS |
分类号 |
H01L23/15;H05K1/03;H05K3/10 |
主分类号 |
H01L23/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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