发明名称 POWER SEMICONDUCTOR MODULE
摘要 A semiconductor module includes a multilayer substrate. The multilayer substrate includes a first metal layer and a first ceramic layer over the first metal layer. An edge of the first ceramic layer extends beyond an edge of the first metal layer. The multilayer substrate includes a second metal layer over the first ceramic layer and a second ceramic layer over the second metal layer. An edge of the second ceramic layer extends beyond an edge of the second metal layer. The multilayer substrate includes a third metal layer over the second ceramic layer.
申请公布号 US2010065962(A1) 申请公布日期 2010.03.18
申请号 US20090624622 申请日期 2009.11.24
申请人 INFINEON TECHNOLOGIES AG 发明人 BAYERER REINHOLD;HUNGER THOMAS
分类号 H01L23/15;H05K1/03;H05K3/10 主分类号 H01L23/15
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