| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve film deposition under various conditions by adjusting the size of a mixing chamber. Ž<P>SOLUTION: Vapor deposition equipment 1 includes a shower plate 2 which is disposed opposite a substrate holding member 16 where a substrate 15 to be processed in a reactor 14 is placed and held and which supplies a first gas toward the substrate 15 to be processed, and a shower plate 3 which is disposed on the opposite side of the substrate holding member 16 with respect to the shower plate 2 and supplies a second gas toward the substrate 15 to be processed. The shower plate 2 has a gas flow passage 4a in which the first gas flows toward the substrate 15 to be processed, and the shower plate 3 has a gas conduit 5 which projects from the shower plate 3 and is inserted into the gas flow passage 4a and in which the second gas flows toward the substrate 15 to be processed, the space formed of the gas flow passage 4a and gas conduit 5 is different in configuration between the center and peripheral edge of the shower plate 2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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