发明名称 |
METHODS OF FABRICATING HIGH-K METAL GATE DEVICES |
摘要 |
Methods of fabricating semiconductor devices with high-k/metal gate features are disclosed. In some instances, methods of fabricating semiconductor devices with high-k/metal gate features are disclosed that prevent or reduce high-k/metal gate contamination of non-high-k/metal gate wafers and production tools. In some embodiments, the method comprises forming an interfacial layer over a semiconductor substrate on a front side of the substrate; forming a high-k dielectric layer and a capping layer over the interfacial layer; forming a metal layer over the high-k and capping layers; forming a polysilicon layer over the metal layer; and forming a dielectric layer over the semiconductor substrate on a back side of the substrate.
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申请公布号 |
US2010068876(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090405965 |
申请日期 |
2009.03.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YIH-ANN;CHEN RYAN CHIA-JEN;CHEN CHIEN-HAO;HUANG KUO-TAI;CHEN YI-HSING;LIN JR JUNG;LIN YU CHAO |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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