发明名称 |
METHOD FOR PRODUCING BONDED SILICON WAFER |
摘要 |
A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
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申请公布号 |
US2010068867(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090557809 |
申请日期 |
2009.09.11 |
申请人 |
SUMCO CORPORATION |
发明人 |
KUSABA TATSUMI;ENDO AKIHIKO;NISHIHATA HIDEKI;MORIMOTO NOBUYUKI |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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