| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, where dispersion within a wafer surface is small and a yield is high. Ž<P>SOLUTION: A method of manufacturing a semiconductor device includes: a process for introducing a first-conductivity-type impurity onto a front of a first-conductivity-type semiconductor wafer; a process for diffusing the first-conductivity-type impurity to desired depth; a process for removing a first-conductivity-type impurity region obtained by diffusing the first-conductivity-type impurity to the desired depth to desired depth to obtain a front of a desired conductivity type semiconductor wafer; a process for introducing the second-conductivity-type impurity to the front of the semiconductor wafer to form a second-conductivity-type impurity region; and a process for forming an electrode in the second-conductivity-type impurity region and on the rear of the first-conductivity-type semiconductor wafer to form a circuit element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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