| 摘要 |
A MOS with reverse current limiting function and a voltage conversion circuit using the same is disclosed which employs a resistance unit coupled between a base and a first source/drain of a metal oxide semiconductor (MOS). When a reverse current occurs, a reverse current passing through a body diode of the MOS is limited to prevent the MOS from being burned out due to overheating. Moreover, the voltage level of the base is equal to the voltage level of the first source/drain, such that the Rds (on) of the MOS can be reduced. Therefore, a converter with the disclosed MOS may provide a higher conversion efficiency.
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