| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a CIS transistor using a high permittivity film as a gate insulating film. SOLUTION: On the principal plane of a substrate 1, the active region of a pMIS transistor and the active region of an nMIS transistor insulated and separated from each other by an element isolation region 2 are provided. A hafnium-based oxide film 5 configuring the gate insulating film of the nMIS transistor is provided on the active region of the nMIS transistor so as to be on the element isolation region 2, and a hafnium-based oxide film 9 configuring the gate insulating film of the pMIS transistor comprising a material different from that of the hafnium-based oxide film 5 is brought into contact with the hafnium-based oxide film 5 on the element isolation region 2 and provided on the active region of the pMIS transistor. COPYRIGHT: (C)2010,JPO&INPIT |
