| 摘要 |
<p>[PROBLEMS] To provide a method for metallic wiring formation, which can form a metallic wiring of an ultrathin film, and an electronic component comprising a metallic wiring of an ultrathin film. [MEANS FOR SOLVING PROBLEMS] A compound containing an ethoxysilane group or methoxysilane group and a thiol group is utilized to prepare a large number of metallic fine particles previously covered on their surface with the above compound by chemical bonding of the thiol group in the compound. The ethoxysilane group or the methoxysilane group is hydrolyzed to give a silanol group which is then chemically bonded to a substrate surface on which a metallic wiring is to be formed, whereby the metallic fine particles are fixed onto the substrate surface. The metallic wiring may be formed of the metallic fine particles only. Alternatively, the same type of or a dissimilar metal may be thickly deposited by electroless plating in the presence of the metallic fine particles as a catalyst.</p> |
