| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the bridge between a gate and a landing plug by forming the recess of an isolation layer which is deeper than the recess of an active region. CONSTITUTION: An element isolation layer(106a) for defining an active region is formed on a semiconductor substrate(100). The step height of the element isolation layer is higher than the active region. A recess is formed by etching the active region and the element isolation layer through a photographic etching process using a pin mask. A gate(122) is formed on the upper side of the recess.
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