发明名称 DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE
摘要 A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.
申请公布号 US2010068834(A1) 申请公布日期 2010.03.18
申请号 US20090622971 申请日期 2009.11.20
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HACHIGO AKIHIRO;NISHIURA TAKAYUKI;ISHIBASHI KEIJI
分类号 H01L21/66;G01N21/00;G01N21/21;G01N21/27;G01N21/956;H01L33/00;H01L33/32 主分类号 H01L21/66
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