发明名称 |
BIAS CIRCUITS AND METHODS FOR ENHANCED RELIABILITY OF FLASH MEMORY DEVICE |
摘要 |
A non-volatile semiconductor memory device includes: cell strings connected to respective bit lines; each of the cell strings having a string select transistor connected to a string select line, a ground select transistor connected to a ground select line, and memory cells connected to corresponding word lines and connected in series between the string select transistor and the ground select transistor; a first voltage drop circuit configured to reduce an applied read voltage during a read operation; a second voltage drop circuit configured to reduce the applied read voltage; a string select line driver circuit configured to drive the string select line with the reduced voltage provided by the first voltage drop circuit; and a ground select line driver circuit configured to drive a ground select line with the reduced voltage provided by the second voltage drop circuit.
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申请公布号 |
US2010067297(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090571980 |
申请日期 |
2009.10.01 |
申请人 |
CHAE DONG-HYUK;LIM YOUNG-HO |
发明人 |
CHAE DONG-HYUK;LIM YOUNG-HO |
分类号 |
G11C16/26;G11C16/04 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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