| 摘要 |
A method and apparatus for the high rate deposition of thin film materials on a stationary or continuous substrate. The method includes delivery of a preselected precursor intermediate to a deposition chamber and formation of a thin film material from the intermediate. The intermediate is formed outside of the deposition chamber and includes a metastable species such as a free radical. The intermediate is preselected to include a metastable species conducive to the formation of a thin film material having a low defect concentration. By forming a low defect concentration material, deposition rate is decoupled from material quality and unprecedented deposition rates are achieved. In one embodiment, the preselected precursor intermediate is SiH3. The method includes combining the preselected intermediate with a carrier gas, preferably in a deactivated state, where the carrier gas directs the transport of the preselected intermediate to a substrate for deposition of the thin film material. |
