| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce an off-current of a thin-film transistor wherein a channel forming region is an oxide semiconductor. <P>SOLUTION: The thin-film transistor includes the oxide semiconductor layer as the channel forming region, wherein an oxygen concentration of a surface which is in contact with an insulation film as a protective film on an opposite side (a back channel side) to a gate insulation film of the oxide semiconductor layer is controlled. That is, an oxygen concentration of a surface on the back channel side of the oxide semiconductor layer is increased to reduce the off-current. When the oxygen concentration of the oxide semiconductor is increased, generation of microcrystal is suppressed to amorphize. As a region, which has the increased oxygen concentration and is amorphized, in the oxide semiconductor is increased in resistance, a current is prevented from flowing. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
