| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method which prevent the clogging of gas discharge holes in a shower head, consequently suppress the occurrence of variance in reaction gas flow to be fed, and thereby securing film uniformity on the substrate to be processed and film reproducibility. SOLUTION: An MOCVD (Metal Organic Chemical Vapor Deposition) apparatus 10 includes: the shower head 20 in which the plurality of gas discharge holes H3, H5 are arranged; and a shower plate 30 provided opposite to the shower head 20 and in which a plurality of plate holes 31 are arranged, wherein, gas is fed from the shower head 20 through the gas discharge holes H3, H5 and the plate hole 31 of the shower plate 30 into a reaction chamber 1 to deposit a film on the substrate 3 to be processed. Either the gas discharge holes H3, H5 of the shower head 20 or the surface holes 31a on the head side in the plate holes 31 of the shower plate 30 confronted with the gas discharge holes H3, H5 of the shower head 20 is larger than the other. COPYRIGHT: (C)2010,JPO&INPIT
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