| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of stably manufacturing a nonvolatile storage device even when the device has a fine structure. Ž<P>SOLUTION: The method of manufacturing the nonvolatile storage device having first wiring extending in a first direction, second wiring extending in a second direction not parallel with the first direction, and a recording layer sandwiched between the first wiring and second wiring and reversibly changing between a first state and a second state with currents supplied through the first wiring and second wiring, includes the stages of: forming a layer of the first wiring; forming the recording layer on a principal surface of the layer of the first wiring; forming a plurality of laminates extending in the first directions by selectively etching the recording layer and the layer of the first wiring; forming a first insulating layer through vapor growth on a surface of a gap between the plurality of laminates; and forming a second insulating layer through coating on the first insulating layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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