发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce power consumption, to improve a transmission rate of an input/output buffer, and to suppress an increase in manufacturing cost. Ž<P>SOLUTION: Thick-film transistors are used for a memory cell array 33, a row decoder 30, and a sense amplifier 32 surrounded by bold dashed lines. Transistors which have the same thicknesses as those of the transistors and a lower threshold voltage than those of the transistors are used for input buffers 11-13 and the input/output buffer 26 surrounded by bold lines. Thin-film transistors are used for a clock generation part 16, a command decoder 17, a mode resistor 18, a control part 20, a row address buffer and refresh circuit 21, a column address buffer and the burst counter 22, a data control circuit 23, a latch circuit 24, a DLL 25, and a column decoder 31. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010062193(A) 申请公布日期 2010.03.18
申请号 JP20080223510 申请日期 2008.09.01
申请人 ELPIDA MEMORY INC 发明人 DONO CHIAKI;KOSHIKAWA KOJI
分类号 H01L21/8242;H01L21/8234;H01L27/088;H01L27/108 主分类号 H01L21/8242
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