| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-cost low-resistance silicon carbide semiconductor substrate, and a method of manufacturing the same. Ž<P>SOLUTION: The silicon carbide semiconductor substrate includes a thin layer 1c of a silicon carbide semiconductor substrate which has a thickness of 0.05 to 2.00 μm, a silicon carbide semiconductor layer 7 for semiconductor function region formation deposited on one principal surface of the thin layer 1c, a graphite layer 4 deposited on the other principal surface of the thin layer 1c to form a support substrate, and a silicon carbide composition thin film 5a with which a surface of the graphite layer 4 is coated. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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