| 摘要 |
A semiconductor device includes a first MISFET and a second MISFET, wherein the first MISFET includes a semiconductor substrate 100, a first gate insulating film 101a and a first gate electrode 102a formed on the first region of the semiconductor substrate, and first side walls (103a, 120a) formed on the side surface of the first gate electrode 102a, and the second MISFET includes a second gate insulating film 101b and a second gate electrode 102b formed on the second region of the semiconductor substrate 100, and second side walls (103b, 120b) formed on the side surface of the second gate electrode 102b. The width of the first side wall is smaller than the width of the second side wall, and the second side wall includes the second spacer 103b containing a higher concentration of hydrogen than the first spacer 103a.
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