III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE (LED)

摘要

This invention relates to a III-nitride semiconductor light emitting device comprising: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer doped with a p-type dopant; an active layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, and having a quantum well layer for producing light by re-coupling electrons and electron holes; and a diffusion barrier positioned between said quantum well layer and said p-type nitride semiconductor layer so as to come in contact said layers, and having a smooth interface with said p-type nitride semiconductor layer in order to prevent diffusion of the p-type dopant to said quantum well layer.