SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Provided is a semiconductor device, wherein a gate insulating film (5) is formed on a first conductivity type semiconductor region (1a), a gate electrode (6) is formed on the gate insulating film (5), and on a side surface of the gate electrode (6), a first offset spacer (7a), a second offset spacer (7b) and a side wall (10) are sequentially formed.  Furthermore, a second conductivity type extension region (8) is formed below a side of the gate electrode (6) in the semiconductor region (1a), and a first conductivity type pocket region (9) is formed below the side of the gate electrode (6) below the extension region (8) in the semiconductor region (1a).