发明名称 SINGLE PHOTON SOURCE WITH AllnN CURRENT INJECTION LAYER
摘要 A photon source includes a substrate, an active region formed above the substrate, and a pair of electrodes configured to provide an injection current which passes through the active region. The active region includes a quantum dot layer including one or more AlyGaxIn1-x-yN quantum dots, where 0≦̸x≦̸1 and 0≦̸y≦̸<1, and an AlInN current confinement layer adjacent the quantum dot layer. The current confinement layer has an aperture which defines a low resistance path for the injection current to flow through the active region between the pair of electrodes. The quantum dot layer includes less than 50 quantum dots within the aperture as projected onto the quantum dot layer.
申请公布号 US2010065811(A1) 申请公布日期 2010.03.18
申请号 US20080212729 申请日期 2008.09.18
申请人 SENES MATHIEU XAVIER;SMITH KATHERINE LOUISE;BROADLEY VICTORIA;HOOPER STEWART EDWARD 发明人 SENES MATHIEU XAVIER;SMITH KATHERINE LOUISE;BROADLEY VICTORIA;HOOPER STEWART EDWARD
分类号 H01L33/00 主分类号 H01L33/00
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