发明名称 |
METHODS FOR PREPARING SILICON GERMANIUM ALLOY NANOCRYSTALS |
摘要 |
The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
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申请公布号 |
US2010068114(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20080523210 |
申请日期 |
2008.01.14 |
申请人 |
VEINOT JONATHAN GORDON CONN;HENDERSON ERIC JAMES |
发明人 |
VEINOT JONATHAN GORDON CONN;HENDERSON ERIC JAMES |
分类号 |
C01B33/06 |
主分类号 |
C01B33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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