发明名称 METHODS FOR PREPARING SILICON GERMANIUM ALLOY NANOCRYSTALS
摘要 The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
申请公布号 US2010068114(A1) 申请公布日期 2010.03.18
申请号 US20080523210 申请日期 2008.01.14
申请人 VEINOT JONATHAN GORDON CONN;HENDERSON ERIC JAMES 发明人 VEINOT JONATHAN GORDON CONN;HENDERSON ERIC JAMES
分类号 C01B33/06 主分类号 C01B33/06
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