METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the property and the reliability of the semiconductor device including the separation of landing plugs by minimizing the step height of gates. CONSTITUTION: Landing plugs are formed in the first region of a cell region. Landing plugs are not formed in the second region of the cell region. Gates(102) are formed in the cell region and a peripheral area. An insulation layer(106) is formed on a semiconductor layer to cover the gates. The insulation is etched to expose the gates and the semiconductor substrates. A conductive layer is formed to bury the exposed part. A first etch back is performed to expose a hard mask(104) which is arranged in the second region. A second etch back is performed to reduce the step difference between the hard masks which are arranged on the first and the second regions.