| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide thin-film transistor having stable characteristics, and to provide a method of manufacturing the same. Ž<P>SOLUTION: A gate insulating layer 5 laminated on an upper surface of an oxide semiconductor layer 9 is constituted of a non-fluoro organic resin layer 51 covering the oxide semiconductor layer 9 and an amorphous perfluoro resin layer 52 covering the non-fluoro organic resin layer 51. It has been confirmed that the oxide thin-film transistor 1 having the stable characteristics can be obtained by using the amorphous perfluoro resin layer 52 as a constituent element of the gate insulating layer 5. It has been confirmed that the oxide thin-film transistor 1 having a low drive voltage can be obtained by adopting PVP (polyvinyl phenol) higher in permittivity than the amorphous perfluoro resin as the material of the non-fluoro organic resin layer 51. Thus, the high performance oxide thin-film transistor 1 can be readily obtained at a low cost. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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