发明名称 |
SEMICONDUCTOR IMAGE SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor image sensor improved in conversion efficiency. SOLUTION: This image sensor 10 has an image sensing element that includes an N-type conducting region 26 and a P-type pinned layer 37. The two regions form two P-N junctions at different depths that improves the efficiency of charge carrier collection at different frequencies of light. The conducting region 26 is formed by angled injection that allows a portion of the conducting region 26 to function as a source of an MOS transistor 32. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010062588(A) |
申请公布日期 |
2010.03.18 |
申请号 |
JP20090282709 |
申请日期 |
2009.12.14 |
申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
CLIFFORD I DROWLEY;MARK S SWENSON;JENNIFER J PATERSON;SHURINASU RAMASUWAMI |
分类号 |
H01L27/146;H01L21/265;H01L21/8238;H01L27/092;H01L31/10 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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