| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device with high efficiency in current injection and high reliability by improving the crystallinity of a layer for embedding a diffraction grating when forming a semiconductor layer forming the diffraction grating and a semiconductor layer below it by semiconductor materials including different group V elements. Ž<P>SOLUTION: In the method of manufacturing the optical semiconductor device, a first compound semiconductor layer 6 including a first group V element is formed above a compound semiconductor substrate 1, a second compound semiconductor layer 7 including a second group V element different from the first group V element is formed on the first compound semiconductor layer 6, the second compound semiconductor layer 7 is patterned to form the diffraction grating 7A, the first compound semiconductor layer 6 is removed with the diffraction grating 7A as a mask, the side of the first compound semiconductor layer 6 is covered with a compound semiconductor film 8 including the second group V element, and the diffraction grating 7A is embedded by a third compound semiconductor layer 9 including the first group V element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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