| 摘要 |
A method for the realization of a microelectronic device which includes at least one semi-conductor zone which rests on a support and which exhibits a Germanium concentration gradient in a direction parallel to the principal plane of the support, where the method involves steps for: a) The formation, on a support, of at least one oxidation masking layer which includes one or more holes, where the holes reveal at least one first semi-conductor zone which includes inclined flanks and which is based on Si, b) The formation of at least one second semi-conductor zone based on Si1-xGex (where 0<x) on said first semi-conductor zone based on Si, c) Thermal oxidation of said first semi-conductor zone and of the second semi-conductor zone through said masking layer.
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