发明名称 |
SEMICONDUCTOR FOR USE IN HARSH ENVIRONMENTS |
摘要 |
A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-based blocking layer may be disposed between the at least two barrier layers. |
申请公布号 |
WO2009140395(A3) |
申请公布日期 |
2010.03.18 |
申请号 |
WO2009US43800 |
申请日期 |
2009.05.13 |
申请人 |
BAKER HUGHES INCORPORATED;CSUTAK, SEBASTIAN |
发明人 |
CSUTAK, SEBASTIAN |
分类号 |
H01L21/18;H01L21/336;H01L31/10;H01L33/02 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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