| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method that facilitates improving the uniformity of the thickness of a layer to be deposited on a semiconductor wafer using a CVD method. <P>SOLUTION: In the method of depositing a layer on a semiconductor wafer 4; a distance D between a plane E and a window 5 is larger in a central region 7 of the window 5 and in a peripheral region 8 of the window 5 as the region 8 goes from the outside to the inside thereof. A tangent line to a boundary between the central and peripheral regions 7 and 8 with respect to a profile in the radial direction of the distance D is selected to form an angle of≥15 degrees and≤25 degrees relative to the above plane, thus changing the velocity of a deposition gas guided to a semiconductor wafer 4. At this point, the central region 7 of the window 5 is provided inside of the window 5 covering the semiconductor wafer 4, and the peripheral region 8 of the window 5 is provided outside of the window not covering the wafer 4. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
