| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for processing a substrate and a method for analysing an impurity of a silicon substrate capable of highly sensitively analysing an impurity of a silicon substrate by etching the main surface of the substrate to improve the etching accuracy for processing the substrate to analyse the impurity the silicon substrate. Ž<P>SOLUTION: The apparatus for processing the substrate used for analysing the impurity of the silicon substrate includes at least: a stage for holding the substrate to be processed; a vessel for storing an etching solution; a nozzle for locally spraying the vapor of the etching solution to the main surface of the substrate; a moving mechanism for moving the nozzle along the main surface of the substrate; and an etching gas supplying tube for supplying the vapor of the etching solution from the vessel to the nozzle. The apparatus for processing the substrate is provided with a heater for heating the vapor of the etching solution around the outside of the nozzle and/or the etching gas supplying tube. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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