| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a gas barrier film which exhibits satisfactory gas barrier properties over a long period by capacitive coupling type plasma CVD using gaseous silane, gaseous ammonia, gaseous hydrogen and/or gaseous nitrogen as raw material gas. SOLUTION: A silicon nitride film is formed on a substrate while applying bias potential of≤-100 V under the conditions where P/Q with a gaseous silane flow rate as Q and plasma production as P is 10 to 30[W/sccm], film formation pressure is 20 to 200 Pa and substrate temperature is≤70°C. COPYRIGHT: (C)2010,JPO&INPIT
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