METHOD FOR REDUCING CRYSTAL DEFECT OF SIMOX WAFER AND SIMOX WAFER

摘要

PROBLEM TO BE SOLVED: To reduce crystal defects existing in a silicon layer under the BOX layer of an SIMOX wafer. SOLUTION: A method for reducing crystal defects of a SIMOX wafer includes: a first process to destroy crystal defects by making ion injected into a silicon layer 13 from the surface of a wafer collide with crystal defects (14, 15); and a second process to recrystalize the silicon layer 13 by heating the wafer obtained in the first process. In the first process, when the ion to be injected into the silicon layer 13 is oxygen ion, its injection is started in the state where the temperature of the SIMOX wafer is 50°C or lower, the amount of ion dose is 5×1015-1.5×1016atoms/cm2, and an injected energy is 150 keV or more and 220 keV or less. COPYRIGHT: (C)2010,JPO&INPIT